TRANSISTOR, VHF, SILICON, POWER TYPE EL-2N (X-9) 5W 500 MC PEM.
Quarterly rept. no. 2, 1 Aug-31 Oct 65,
TRW SEMICONDUCTORS INC LAWNDALE CALIF RESEARCH AND DEVELOPMENT DEPT
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Glassification of finished units continues by the reactive diode sputtering while RF dielectric sputtering equipment is being prepared for sputtering of wafers as well as finished units. The six-leaded butterfly glassified-molded package yields the best performance with the simplest assembly. Two cell and complete four cell devices of the four emitter patterns with each of the two metallized patterns have been examined for optimum performance leading to the final design. The first engineering samples produced 5 to 6 dB of power gain with 35 to 45 efficiency at 28 V. The second engineering samples produced 5 to 6.5 dB of power gain with 50 to 55 efficiency at 28 V. From this data the final interrupted emitter device was prepared at the 10 watt level. In addition, an interdigitated device was also prepared for comparison at the 10 watt level. Preliminary results on the interdigitated device are 5 to 7.5 dB with 40 to 70 efficiency at 28 V. The final interrupted emitter device is currently being processed. Author
- Electrical and Electronic Equipment