Accession Number:

AD0631515

Title:

PREPARATION OF CHEMICAL VAPOR-DEPOSITED MATERIALS FOR USE IN FIELD-ENHANCED ELECTRON EMISSION STUDIES.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s):

Report Date:

1966-03-01

Pagination or Media Count:

44.0

Abstract:

The general principles of chemical vapor deposition CVD are described and specific experimental results on the deposition of pyrolytic graphite, of CVD boron nitride, and of CVD tungsten on tungsten substrates are discussed. In order to obtain uniform anisotropic, thin films of pyrolytic graphite and CVD boron nitride, the deposition parameters such as deposition temperature, concentration of the gaseous reactants, and gas flow pattern were varied, and their influence on the deposits was studied. It was found that the uniformity of pyrolytic graphite can be increased by using high total gas flow rates and low methane concentrations. The most uniform CVD-boron nitride deposits were obtained under the following conditions Temperature 1600C Gas flow rate ccmin ammonia 10, boron trichloride 6, nitrogen 4. The deposits of pyrolytic graphite and CVD boron nitride exhibited a high degree of anisotropy. Thin-film sandwich structures of pyrolytic graphite and CVD boron nitride were successfully produced. Preliminary tests have been performed with CVD tungsten. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Ceramics, Refractories and Glass
  • Coatings, Colorants and Finishes
  • Fabrication Metallurgy
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE