THIN FILM MICROCIRCUIT INTERCONNECTIONS.
Quarterly rept. no. 2, 1 Oct-31 Dec 65,
BENDIX RADIO DIV BENDIX CORP BALTIMORE MD
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Process specifications for the deposition of chromium, silicon-monoxide and tantalum-aluminum were established. Adhesion tests of chromium-gold, chromium and aluminum thin films to glass substrates were completed. All interfacial interconnection combinations were fabricated, and D. C. measurements yielded an order-of-magnitude value for their D. C. interfacial resistance. Infrared photography was evaluated as a non-destructive test for the quality of thin film interconnections, and it was found to be not very useful. A new interfacial interconnection pattern is proposed which will make possible precise quantitative values for the interfacial resistance. Insulating crossover combinations were fabricated using silicon-monoxide as the dielectric, at various thicknesses from 2,700A to 27,000A. No correlation between capacitance and breakdown voltage was found. Asymmetrical voltage breakdown was investigated and none was found to exist. An automatic tester for breakdown voltage determinations is being designed. Author
- Electrical and Electronic Equipment