GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION.
Quarterly progress rept. no. 3, 15 Jun-15 Sep 65,
NORTRONICS NEWBURY PARK CALIF APPLIED RESEARCH DEPT
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Work was primarily analytical and devoted to the characterization of the second-order effects which significantly influence the transient response of practical transistors. Previously, the lumped-model technique was applied to the one-dimensional diffusion models of the junction diode and transistor. It was assumed in all cases that the lumped model parameters were independent of the junction bias voltages and terminal currents. There are three serious deviations from the ideal model in a practical transistor the two-dimensional nature of the base region, the variation of the transistor current gain with emitter current, and the electric field effects induced in the high-resistivity collector region. The lumped-model technique was used to extend the transistor model to include all three effects. Author
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