Accession Number:

AD0631302

Title:

INTRINSIC POINT DEFECTS IN CDS.

Descriptive Note:

Technical rept.,

Corporate Author:

DELAWARE UNIV NEWARK DEPT OF PHYSICS

Personal Author(s):

Report Date:

1966-04-01

Pagination or Media Count:

15.0

Abstract:

The unambiguous identification of intrinsic defects in semiconductors is essential for understanding the electronic microprocesses involved in luminescence and photoconductivity. Progress has been made in identification of the sulfur vacancy and its influence on electrical properties. The sulfur vacancy was created by x-ray damage above a threshold energy between 250 and 300 keV. In order to minimize the influence of ambient gases, the x-ray damage was done in ultra-high vacuo p 5 x 10 to the 10th power torr. A sulfur vacancy is produced adjacent to the surface or low angle boundaries and its production can be impeded by preceding sulfur treatment of the crystal. The analysis of conductivity glow curves shows a level of 0.5 eV below the conduction band for this sulfur vacancy. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE