Accession Number:

AD0631266

Title:

RADIATION EFFECTS ON INSULATED GATE FIELD EFFECT (MOS) INTEGRATED CIRCUITS.

Descriptive Note:

Quarterly technical progress rept. no. 2, 1 Oct-31 Dec 65,

Corporate Author:

MARTIN CO BALTIMORE MD

Personal Author(s):

Report Date:

1966-04-01

Pagination or Media Count:

39.0

Abstract:

A shielded exposure box was constructed to reduce charge scattering and leakage currents in the flash x-ray instrumentation circuitry. The box reduced the response of the instrumentation circuitry by about an order of magnitude to levels less than 10 microamps. The theoretical analysis involved the investigation of damage mechanisms for the threshold voltage of MOS devices. Order-of-magnitude estimates and qualitative arguments are used to consider the effects of ionization, atomic displacements, and charge scattering. The primary damage mechanism is tentatively identified as the sweeping out of ionization-induced electrons from the oxide by electric fields in the oxide. The construction of p-enhancement and n-depletion devices is discussed, as are the techniques for accomplishing controlled variations of manufacturing parameters on selected devices.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE