MEASUREMENT OF THE LIFETIME OF MINORITY CURRENT CARRIERS IN GE AND SI BY OBSERVING THE PHOTOCONDUCTIVE DECAY OF THE SPREADING RESISTANCE UNDER A POINT CONTACT.
EMMANUEL COLL BOSTON MASS ORIENTAL SCIENCE LIBRARY
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The paper presents a study of the photoconductive decay of the spreading resistance of Ge and Si under various exciting lights and surface conditions. The influence of the surface recombination velocity and exciting light on the shape of the decay curve is also studied, and a simple method is described for testing the volume lifetime.
- Solid State Physics