THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.
Quarterly technical rept. no. 8, 1 Sep-30 Nov 65,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
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The report summarizes work done on techniques for fabricating thin conductive, resistive and dielectric films by complete or partial oxidation of a suitable metallic film deposited in predetermined patterns and sequences. Investigation of the mechanism of the deposition process continued. A general law for the relationship between resistivity and time is expressed in logarithmic form. A study was made of the aging characteristics of deposited films. A large series of tests has begun in order to obtain information on the reactive-sputtered Ta2O5 dielectric. The 455 kHz amplifier test vehicle did not notch at the nominal frequency but rather at 1.5 MHz. Attempts were made to selectively etch reactively sputtered tantalum by back sputtering. The conclusions on work results are 1 For a practical production process, a limit of about 500 ohmssquare for sheet resistivity must be set 2 Better control of the sputtering ambient gas is necessary 3 Work on the 455 kHz amplifier has stopped pending further work on the MnO2 layer to reduce capacitor losses at high frequency 4 Gold-doped resistors require further analysis to establish temperature coefficient of resistivity values and the maximum sheet resistance obtainable and 5 Sputter etching is not applicable to the removal of heavily oxidized tantalum films from silicon oxide substrates. Author
- Electrical and Electronic Equipment
- Fabrication Metallurgy