Accession Number:

AD0630836

Title:

EFFECT OF TRANSISTOR DESIGN PARAMETERS ON RADIATION RESPONSE (POWER TRANSISTORS).

Descriptive Note:

Quarterly rept. no. 2, 1 Oct-31 Dec 65,

Corporate Author:

HUGHES AIRCRAFT CO FULLERTON CALIF

Report Date:

1966-04-01

Pagination or Media Count:

32.0

Abstract:

The theory of irradiation data analysis is worked out in accordance with the techniques of the analysis of variance. The basic irradiation data consists of two sets of numbers associated with each design variation treatment. The first set is the slope of the common base current gain as a function of fluence for a particular emitter current. The second set, which characterizes the response of a device to a pulse of ionizing radiation, is the maximum amplitude of the transient collector base leakage current produced by the pulse. In preparation for data analysis by digital computer, a double subscript notation is worked out, representing a particular design factor and a treatment number respectively, and is applied in the development of various sum-of-square expressions required for the analysis of variance. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE