EFFECT OF TRANSISTOR DESIGN PARAMETERS ON RADIATION RESPONSE (POWER TRANSISTORS).
Quarterly rept. no. 1, 1 Jul-30 Sep 65,
HUGHES AIRCRAFT CO FULLERTON CALIF
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The object is to determine design characteristics and fabrication techniques for a silicon planar power transistor that will minimize the effects of ionization and lattice displacement caused by high energy radiation. The experimental phase uses specially designed transistors in which various design variations have been included. Radiation testing of these transistors is in accordance with factorial design principles. The data are analyzed using the techniques of the analysis of variance. The theoretical effort is based on transistor physical design theory and is used to correlate and verify the results of experiment. Work during the first quarter consisted of the formulation of physical design theory including the effects of injection level. In addition, the sequencing of the fabrication steps for the 2N2369 was laid out in accordance with statistical design principles and transistor fabrication was initiated. Instrumentation design was completed and construction started on the circuits. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products