Accession Number:

AD0630587

Title:

CURRENT-VOLTAGE CHARACTERISTICS OF THIN -FILM DIODES

Descriptive Note:

Technical rept. Mar-Jun 1965

Corporate Author:

NAVAL CIVIL ENGINEERING LAB PORT HUENEME CA

Personal Author(s):

Report Date:

1966-03-01

Pagination or Media Count:

40.0

Abstract:

The current-voltage I-V characteristics of thin-film diodes were measured at 4.2K, 77K, and room temperature. Superconductive tunneling was achieved with a diode consisting of aluminum, aluminum oxide, and lead Al Al2O3Pb. In the nonsuperconducting state the AlAl2O3Pb type of thin-film diode exhibited Zener breakdown between 1.5 and 3.5 volts. However, the Al Al2O3Pb diodes did not have reproducible I-V characteristics, and the nonsuperconducting AlAl2O3Pb diode could not be operated with AC voltage long enough to serve as a practical electronic device. A thin-film diode consisting of aluminum, aluminum oxide, manganese, and lead exhibited power -law I-V characteristics at ambient temperatures, under 60-cycle excitation, and could be operated with a reproducible I-V characteristic for several hours. Bistable switching was achieved with a thin-film diode consisting of aluminum, aluminum oxide, lead, and aluminum in this diode the short-circuit state was produced by a high-voltage pulse and the open-circuit state by a low-voltage pulse. A theoretical analysis of the observed I-V characteristic is presented.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE