PRODUCTION ENGINEERING MEASURE (PEM) FOR SILICON VARACTOR DIODE.
Quarterly progress rept. no. 3, 1 Oct-31 Dec 65,
SYLVANIA ELECTRIC PRODUCTS INC WOBURN MASS SEMICONDUCTOR DIV
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Group B tests, were completed on units from the Second Engineering Test Sample Run. Process changes were made during the quarter to incorporate the use of silicon junctions of the planar structure for the Third Engineering Test Sample Run as opposed to the mesa structure used for fabrication of units in the first two runs. Preliminary tests on units from the third run indicate considerable improvement particularly in regard to thermal resistance characteristics, uniformity of parameter distributions, and ability to withstand high temperature storage testing. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems