ON THE INFLUENCES OF CHANGES OF CARRIER DENSITY ON THE CURRENT FLOW IN A CHANNEL
ARMY BALLISTIC RESEARCH LAB ABERDEEN PROVING GROUND MD
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A study was made of the effect of varying the density of free charge carriers in a semiconductor channel under the influence of a retarding field. It was found that the conditions required for charge binding in the space-charge region are dramatically altered by changes in the distribution of charge. The transconductance per unit current is also drastically altered. Based on the study, it can be presumed that significantly more efficient field effect transistors can be built than have been obtained to date.
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