HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.
Quarterly interim development rept. no. 3, 27 Nov 65-27 Feb 66,
CHATHAM ELECTRONICS DIV TUNG-SOL ELECTRIC INC LIVINGSTON N J
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A planar silicon dioxide passivated diode has been designed and fabricated for the EBM tube. The typical reverse electrical characteristics of the diode are a reverse voltage breakdown of 700-1000 volts with a maximum reverse leakage current of 3 micro amps at 600 volts reverse bias. The starting material is N float zone bulk silicon with a resistivity in the range 70-125 ohms-cm. Some difficulty was encountered in making a diode with a reverse voltage breakdown of 700 volts with starting material below approximately 125 ohms-cm. However, it has been demonstrated that diodes with reverse voltage breakdowns of greater than 700 volts can be made with starting material of 60 ohms-cm. Lower starting resistivity material provides a lower parasitic resistance in the device during the conduction cycle. It has been demonstrated that these diodes will remain good for extended periods under environmental conditions simulating the inside of a vacuum tube. Author
- Electrical and Electronic Equipment
- Solid State Physics