Accession Number:

AD0628858

Title:

HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.

Descriptive Note:

Quarterly interim development rept. no. 3, 27 Nov 65-27 Feb 66,

Corporate Author:

CHATHAM ELECTRONICS DIV TUNG-SOL ELECTRIC INC LIVINGSTON N J

Personal Author(s):

Report Date:

1966-02-27

Pagination or Media Count:

17.0

Abstract:

A planar silicon dioxide passivated diode has been designed and fabricated for the EBM tube. The typical reverse electrical characteristics of the diode are a reverse voltage breakdown of 700-1000 volts with a maximum reverse leakage current of 3 micro amps at 600 volts reverse bias. The starting material is N float zone bulk silicon with a resistivity in the range 70-125 ohms-cm. Some difficulty was encountered in making a diode with a reverse voltage breakdown of 700 volts with starting material below approximately 125 ohms-cm. However, it has been demonstrated that diodes with reverse voltage breakdowns of greater than 700 volts can be made with starting material of 60 ohms-cm. Lower starting resistivity material provides a lower parasitic resistance in the device during the conduction cycle. It has been demonstrated that these diodes will remain good for extended periods under environmental conditions simulating the inside of a vacuum tube. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE