STRUCTURES FOR 300-WATT, 400MHZ UHF POWER TRANSMISSION.
Interim technical rept. no. 1, 1 Oct-31 Dec 65,
RADIO CORP OF AMERICA SOMERVILLE N J ELECTRONIC COMPONENTS AND DEVICES
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The effect of collector capacitance, both voltage fixed and voltage variable, on the performance of RF transistors is discussed. Two methods for reducing this capacitance are described 1 the use of integral leads to reduce the fixed bonding pad capacitance and 2 N conductance plugs to reduce depletion layer capacitance by permitting the use of higher resistivity starting material Data are given on the performance of paralleled transistors in a cavity structure, and the problems associated with paralleling of transistors are considered. Power output measurements are given on low and medium power RF transistors connected in a Darlington configuration. The necessary circuit modifications are discussed. Author
- Electrical and Electronic Equipment