HIGH POWER VARACTOR FOR UHF TRANSMISSION.
Final rept., 1 Jul 1964-30 Jun 65,
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
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The design of power varactors based on charge storage characteristics rather than on conventional capacitance-voltage relationships provides a mechanism for improving power handling and efficiency in frequency multiplication. During the progress of the contract the design of the silicon chip was changed from double-diffused to a passivated, diffused, epitaxial structure which enhanced the power handling and efficiency of the varactor. The package design was also changed from a ceramic-capped stud configuration to a coaxial cartridge, thus reducing parasitic losses and improving power dissipation. Details of the die structure and assembly techniques are given. The electrical characteristics of the device are given in the form of a specification sheet and Appendix I which describes device performance up to 2 gc. Author
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