HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS (CAPACITORS).
Quarterly progress rept. no. 2, 1 Jun-31 Aug 65,
RADIO CORP OF AMERICA CAMDEN N J DEFENSE ELECTRONIC PRODUCTS
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The deposition rate of hafnium films by cathodic sputtering under the experimental conditions has been determined. For a sputtering time from 0 to 15 minutes an average deposition rate of 330 Amin has been determined. A large number of hafniumhafnium dioxidealuminum capacitors were fabricated by wet and plasma anodization processes. Results on capacitance per unit area, dissipation factor, and uniformity are presented. Tests on maximum breakdown strength of hafnium dioxide films have been performed with aluminum and gold as counter electrodes. Preliminary results on the rate of anodization of hafnium dioxide films and on the dielectric constant are presented. A thin film masking technique has been developed utilizing water soluble materials. Author
- Electrical and Electronic Equipment