Accession Number:

AD0627381

Title:

RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.

Descriptive Note:

Quarterly rept. no. 11, 1 Jul-30 Sep 64,

Corporate Author:

CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV

Personal Author(s):

Report Date:

1964-11-30

Pagination or Media Count:

25.0

Abstract:

Purification of CdS by vacuum sublimation has resulted in more consistant yields of bright yellow single crystals having near intrinsic low-temperature electron mobility. The low-angle grain-boundaries present in seed-grown crystals was traced to surface damage on the seeds. Deep etching of seeds has eliminated this problem. Efforts to reduce the amount of SiO2 inclusion have resulted in only minor improvements. The formation of screw dislocations was traced to the SiO2 particles. The thermally stimulated tap effect in CdS was investigated and is shown to be an electroluminescent effect which results from the pyroelectric nature of CdS. Room temperature edge emission in CdS was obtained when a crystal contained in an evacuated tube was excited by a high voltage, high frequency discharge on the outside of the tubes. The experimental Hall mobility of CdSe is compared with the complete theory and results indicate that these crystals are only weakly compensated. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE