DEVELOPMENT OF INTEGRATED CIRCUITS UTILIZING COMPLEMENTARY TRANSISTORS.
Interim development rept. no. 2, 1 Oct-31 Dec 65.
RADIO CORP OF AMERICA SOMERVILLE N J ELECTRONIC COMPONENTS AND DEVICES
Pagination or Media Count:
Installation of systems for the deposition of both doped and undoped layers of silicon dioxide was completed. Work on the preparation of substrates containing isolated n and p regions is slightly behind schedule, but some major obstacles were overcome. Preliminary design of the circuit was completed and a discussion of it is included in this report. Author
- Electrical and Electronic Equipment
- Solid State Physics