GROWTH AND CHARACTERIZATION OF BETASILICON CARBIDE SINGLE CRYSTALS.
Scientific rept. no. 2, Feb-Sep 65,
STANFORD RESEARCH INST MENLO PARK CALIF
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Changes in crystal size and morphology were obtained by modifying the process for growing crystals of betasilicon carbide from solution in carbon-saturated melts. Well developed laths and plates were grown under conditions favoring dendritic growth mechanisms low thermal gradient with moderate stirring. Polyhedral crystals grew under high thermal gradient conditions when high velocity stirring was employed. Three-dimensionaltype growth was also produced from a 73 wt percent ironsilicon alloy under conditions that normally produce lath-type growth. Uncorrected electron mobilities of 700 to 1000 sq cmv-sec were measured at room temperature, and a few preliminary Hall measurements were made over the temperature range from 77 to 300 K. Author
- Ceramics, Refractories and Glass
- Solid State Physics