DEVELOPMENT AND EVALUATION OF TRANSISTOR, FIELD EFFECT, INSULATED GATE, 400-MEGACYCLE AMPLIFIER.
Quarterly progress rept. no. 1, 15 Jun-14 Sep 65,
RADIO CORP OF AMERICA SOMERVILLE N J ELECTRONIC COMPONENTS AND DEVICES
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During the report period, an assessment was made of the capability of currently available metal oxide semiconductor MOS tetrodes to fill the requirement of a 400megacycle amplifier. In addition, photomasks for the determination of optimum channel length and width for tetrode and pentrode units were designed and fabricated and a capability was developed for measuring the power gain and noise figure of triode, tetrode, and pentode structures at 400 megacycles. Currently available tetrodes yield typical power gain values at 400 megacycles of 10 to 13 dB. This yield is below the contract objective of 20 dB gain at that frequency. Author
- Electrical and Electronic Equipment