A STUDY OF BAND EDGE DISTORTION IN HEAVILY DOPED GERMANIUM.
Physical sciences research papers,
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
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Details of the energy band structure of degenerate n-type germanium were determined by analysis of fine structure in the 4.2K volt-ampere characteristic of germanium tunnel diodes. No shift in the relative energy of the conduction band minima was observed. The band edge is found to be exponentially distributed with 1e energies of the order of 10 MeV. There appears to be an ordering mechanism among the group V impurity atoms used as substrate dopants. Author
- Solid State Physics