Accession Number:

AD0627003

Title:

A STUDY OF BAND EDGE DISTORTION IN HEAVILY DOPED GERMANIUM.

Descriptive Note:

Physical sciences research papers,

Corporate Author:

AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Personal Author(s):

Report Date:

1965-10-01

Pagination or Media Count:

91.0

Abstract:

Details of the energy band structure of degenerate n-type germanium were determined by analysis of fine structure in the 4.2K volt-ampere characteristic of germanium tunnel diodes. No shift in the relative energy of the conduction band minima was observed. The band edge is found to be exponentially distributed with 1e energies of the order of 10 MeV. There appears to be an ordering mechanism among the group V impurity atoms used as substrate dopants. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE