TRANSISTOR, VHF, SILICON, POWER TYPE EL-2N (X-9) 5W 500MC PEM.
Quarterly rept. no. 1, 1 May-31 Jul 65,
TRW SEMICONDUCTORS INC LAWNDALE CALIF RESEARCH AND DEVELOPMENT DEPT
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The program plan was completed during the first quarter. Design improvements, principally in the package design, have been made during this quarter to improve the performance of the 10 watt, 500Mc Research and Development device to meet the 10 dB power gain, 50 collector efficiency goals. Optimized pattern designs were also investigated. Dissusion of the first wafers has taken place with good results. Work on contact metallizing was directed at reducing wafer breakage, emitter-base shorting, and at improving thickness control. Work was started on sputtering of alternate contact metals. Work was started on glassification of both wafers and unmolded transistor assemblies.
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