MICROWAVE OSCILLATIONS IN BULK SEMICONDUCTORS.
Quarterly progress rept. no. 1, 1 Jul-30 Sep 65,
THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y
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The state of development of Gunn effect devices as of the summer of 1965 is reviewed. N-type Gallium Arsenide with resistivity of 10-100 ohm cm has been obtained by the heat treatment of semi-insulating material and the results of preliminary investigation of this material are included. Attempts to make satisfactory ohmic contacts to this material have so far been unsuccessful. The results of several diagnostic experiments on Gunn effect oscillators made of this and lower resistivity materials are presented. Author
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