Accession Number:

AD0626775

Title:

ROOM TEMPERATURE LASER DIODES.

Descriptive Note:

Quarterly rept. no. 1, 1 Jul-30 Sep 65,

Corporate Author:

RCA LABS DIV RADIO CORP OF AMERICA PRINCETON N J

Personal Author(s):

• Dousmanis,George C.
• Akselrad,Aline
• Nelson,Herbert

Report Date:

1965-10-01

Pagination or Media Count:

21.0

Abstract:

The performance of pulsed GaAs injection lasers has been studied at repetition rates as high as 30 kcsec with 80-nsec-wide pulses. Peak power outputs of 10 watts are obtained with 40 A at low repetition rates 0.1 to 10 kcsec. At 30 kcsec the power output is 4.5 watts. These results apply to the conventional parallelepiped structure junction width approx. 0.0075 cm and length 0.025 cm. The experimental results up to 30 kcsec suggest power outputs of about 1 W at 100 kcsec, despite some temperature rise with repetition rate indicated by approximate calculations on heating effects. A new line diode structure is described which embodies a large area p-n junction but with a lasing region width of less than 0.0025 cm. An improved performance is expected at high repetion rates from these units. Author

Descriptors:

• SEMICONDUCTOR DIODES
• LASERS
• DOPING
• SOLIDS
• INJECTION
• OPTICS

Subject Categories:

• Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE