Accession Number:

AD0626729

Title:

SILICON CARBIDE EPITAXIAL TECHNIQUES.

Descriptive Note:

Scientific rept. no. 1, 1 Feb-31 Aug 65,

Corporate Author:

MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV

Personal Author(s):

Report Date:

1965-10-15

Pagination or Media Count:

127.0

Abstract:

Epitaxial silicon carbide SiC films were grown on silicon Si by the simultaneous vapor phase deposition of silicon from silicon tetrachloride or silane and carbon from propane or isobutylene. The reaction temperatures were in the range of 1000 to 1300C pyrometer. The resultant films were extensively examined by electron diffraction and transmission electron microscopy and found to be, for the most part, single crystal beta-SiC with some polycrystalline inclusions of the alpha SiC phase. Structurally, the films do not compare with high quality silicon or germanium. The 100 substrate orientation was found to be a better surface for the growth of beta-SiC than the 111 orientation. The optimum temperature range for film growth was found to be from 1000C to 1100C pyrometer. Low energy electron diffraction studies were not conclusive due to difficulty met in annealing the films. Attempts at growing SiC p-n junctions were not successful, although rectifying junctions were fabricated using n-type films on p-type Si substrates. Most problems appear to be in the difficulty of obtaining definite p-type SiC layers. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE