RF DELAY LINE SYSTEM.
Final technical rept., Oct 64-Jun 65,
LFE ELECTRONICS BOSTON MASS
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A report is given on design and development of an RF Delay Line System. Development efforts, which concentrated mainly on the design and development of the system distribution network, were to provide a network which would not attenuate the input signal more than 10 db and would provide sufficient isolation between parallel channels to maintain bandwidth above 8 Mcs. Design requirements of the post delay amplifier were high gain, high output power, and wide bandwidth. Part of the development effort included a search for available state-of-the-art power transistors and the final selection of the 2N3375 type transistor. Transistor cooling and rf radiation problems were solved by using hot tin dipped steel chassis and by separating and chielding each gain stage. Author
- Electrical and Electronic Equipment