Accession Number:

AD0626540

Title:

RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.

Descriptive Note:

Quarterly rept. no. 10, 1 Apr-30 Jun 64,

Corporate Author:

CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV

Personal Author(s):

Report Date:

1964-08-08

Pagination or Media Count:

41.0

Abstract:

Experimental vapor phase growth of CdS on oriented seeds has resulted in a better understanding of initiating seed growth. The heat balance at the seed, determined mainly by radiation, is the most important factor affecting the temperature of the growth surface. The electrical properties of CdS are greatly modified by plastic deformation due mainly to the effect of dislocation climb. Knoop microhardness tests have shown hardness anisotropies on the different surfaces of CdS, in comparing both similar directions on different surfaces and different directions on the same surface. Electroelastic measurements have been made on Li- and Na-doped CdS crystals with some unaccountable results. The anisotropies of the mobility and Hall effect in semiconductors with slightly elliptical bands and optical mode scattering were calculated under very restrictive assumptions. The numerical values are not significant but the explicit temperature dependence of the anisotropies is of interest. The mobility of several samples of CdS and CdSe were fitted to the theory taking into account all scattering mechanisms. The fit was used to determine the impurity concentrations. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE