Accession Number:

AD0626539

Title:

RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.

Descriptive Note:

Quarterly rept. no. 9, 1 Jan-31 Mar 64,

Corporate Author:

CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV

Personal Author(s):

Report Date:

1964-05-29

Pagination or Media Count:

28.0

Abstract:

Experimental work in the Ninth Quarter continued to emphasize vapor-phase crystal growth on oriented seed crystals of CdS. The effects of inert gas and nonstoichiometric vapor in the growth tube are examined. A possible origin of small-angle boundaries is discussed in terms of dislocations resulting from vacancy precipitation during growth. A newly recognized mode of crystal contamination involving vapor transport agents is discussed. Specific examples of epitaxial growth experiments and some of the difficulties encountered are presented. The intrinsic mobility of CdS, CdSe and ZnTe was calculated using a variational method and the results compared with experiment. The agreement was excellent. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE