RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.
Quarterly rept. no. 9, 1 Jan-31 Mar 64,
CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV
Pagination or Media Count:
Experimental work in the Ninth Quarter continued to emphasize vapor-phase crystal growth on oriented seed crystals of CdS. The effects of inert gas and nonstoichiometric vapor in the growth tube are examined. A possible origin of small-angle boundaries is discussed in terms of dislocations resulting from vacancy precipitation during growth. A newly recognized mode of crystal contamination involving vapor transport agents is discussed. Specific examples of epitaxial growth experiments and some of the difficulties encountered are presented. The intrinsic mobility of CdS, CdSe and ZnTe was calculated using a variational method and the results compared with experiment. The agreement was excellent. Author
- Solid State Physics