RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.
Quarterly rept. no. 8, 1 Oct-31 Dec 63,
CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV
Pagination or Media Count:
Vapor-phase growth on oriented seed crystals was emphasized in the Eighth Quarter. A noteworthy accomplishment was the growth of a large twin-free ZnTe crystal by this method. Plastic Deformation of CdS crystals by three-point bending was initiated in this quarter. Early results indicate that slip occurs on 1010 and 1120 planes and that the slip direction is 1120. Rapid deformation occurs above 700C and the critical resolved shear stress is estimated to be 0.3 kgsq mm. The system CdSe-ZnSe was investigated and complete solid miscibility is shown to exist between 900 and 1200C. The system ZnS-ZnTe was also investigated and a plausible phase diagram is derived from the X-ray results. The variational method of solving the Boltzmann equation was extended to cover more than one scattering mechanism. Detailed results are presented for mixtures of optical mode and piezoelectric scattering. Author
- Solid State Physics