Accession Number:

AD0626536

Title:

RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.

Descriptive Note:

Quarterly rept. no. 6, 1 Apr-30 Jun 63,

Corporate Author:

CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV

Report Date:

1963-08-08

Pagination or Media Count:

46.0

Abstract:

Epitaxial growth of CdS and CdSe from the vapor phase was examined by direct visual observations. The relative ease with which large crystals were produced indicates that this should soon become the preferred method of growth. Radioisotopic studies, carried out in newly designed miniature growth furnaces, show that In114 accumulates in the supply which leads to concentration gradients in the sublimed crystals. Crystal color and lowtemperature fluorescence are correlated with In114 concentration. New measurements on injection luminescence from forward biased CdS cells at 77K yield source brightness approximately 0.01 wattssq cm, power efficiency 10 to the minus 8th power to 0.00001 rising rapidly with voltage, rise time 0.2 microsec, decay time approximatelymicro sec and polarization E perpendicular to C 90. Refractive index measurements band edge to 1.5 micros yield long-wavelength optical dielectric constants of 7.26 0.03 for ZnTe and 5.96 0.02 E perpendicular to C and 6.05 0.02 E parallel to C for CdSe. Electro-optic coeffieients r sub 13 -r sub 33 and r sub 51 for CdS were determined as 4x10 to the minus 12th power and 3.7 x 10 to the minus 12th power mV, respectively. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE