RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.
Quarterly rept. no. 5, 1 Jan-31 Mar 63,
CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV
Pagination or Media Count:
In the Fifth Quarter, epitaxial growth on large-area seed crystals of CdS was achieved for the first time. Improvements were made in the vertical tube method of crystal growth. Radioisotopic studies of the segregation of impurities during sintering and crystal growth have begun. The similarity of the structure of twins in cubic II-VI crystals and in annealed metals leads to the hypothesis that they have identical origins. Twinning occurs during grain growth whenever a net decrease in interfacial energy results. The minimum vapor pressure of CdSe measured in this laboratory is compared with those measured in three other laboratories and leads to what is now believed to be firm values for this quantity. Improved data on three-phase equilibria in the system CdSe are presented. Lattice constant measurements in the system CdSeZnSe indicate a wurtzite-sphalerite transition in the vicinity of 50 mole , and also an immiscibility dome within the solid-solubility field of the phase diagram. A consolute temperature of 1030C is estimated. The 0001 surface of CdS is shown to etch in 6N HCl about 50 faster than the 0001 surface. Author
- Solid State Physics