RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.
Quarterly rept. no. 4, 1 Oct-31 Dec 62,
CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV
Pagination or Media Count:
Fourth quarter progress in the preparation and properties of II-VI compounds is summarized. Vapor phase growth on large area seed crystals were attempted and results are encouraging. A diffusion-precipitation process involving Cd interstitials and Se vacancies is developed to explain resistivity profiles that result from heat treatments in elemental vapors. Light emission from CdS junctions at 77K by hole injection was achieved and elementary design considerations on achieving coherent emission are discussed. The first photograph of imperfections in CdS taken by an x-ray diffraction technique are shown and discussed. New measurements include the thermal expansion of CdS and CdSe parallel to c, and the energy gaps and lattice constants of ZnSeZnTe mixed crystals. A theoretical analysis of the temperature dependence of Hall carrier concentration leads to a set of linearized equations which includes as a variable a temperature dependent Hall factor r neR. Author
- Solid State Physics