Accession Number:

AD0626534

Title:

RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.

Descriptive Note:

Quarterly rept. no. 4, 1 Oct-31 Dec 62,

Corporate Author:

CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV

Report Date:

1963-02-01

Pagination or Media Count:

35.0

Abstract:

Fourth quarter progress in the preparation and properties of II-VI compounds is summarized. Vapor phase growth on large area seed crystals were attempted and results are encouraging. A diffusion-precipitation process involving Cd interstitials and Se vacancies is developed to explain resistivity profiles that result from heat treatments in elemental vapors. Light emission from CdS junctions at 77K by hole injection was achieved and elementary design considerations on achieving coherent emission are discussed. The first photograph of imperfections in CdS taken by an x-ray diffraction technique are shown and discussed. New measurements include the thermal expansion of CdS and CdSe parallel to c, and the energy gaps and lattice constants of ZnSeZnTe mixed crystals. A theoretical analysis of the temperature dependence of Hall carrier concentration leads to a set of linearized equations which includes as a variable a temperature dependent Hall factor r neR. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE