Accession Number:

AD0626533

Title:

RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.

Descriptive Note:

Quarterly rept. no. 3, 1 Jul-30 Sep 62,

Corporate Author:

CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV

Report Date:

1962-11-01

Pagination or Media Count:

23.0

Abstract:

New data on the temperature dependence of the vapor pressure of CdSe, determined by a free-sublimation method, yielded improved values for the standard heat and entropy of sublimation of 84 kcalmole and 51 calmoleK respectively. The pressure-temperature projection of the Cd-rich portion of the CdSe phase diagram was established by observing the state of CdSe crystals subjected to known temperatures and Cd-pressures. The maximum Cd-pressure with which solid CdSe can be in equilibrium is 16.6 atm. This occurs at a crystal temperature of 1145C. The diffusion constant of Cd in CdSe was found to be 4.4 x 10 to the 11th power sq cm sec at 904C. This is in approximate agreement with earlier measurements. The thermal expansion coefficients of CdS and CdSe parallel to c were found to be approximately 60 of those perpendicular to c. A complete set of elastic, dielectric, and piezoelectric constants of CdTe at 77K were established. Analysis of Hall effect measurements on ZnTe yields a hole effective mass of 0.60 .05m and an acceptor ionization energy of 0.155 eV. A hydrogenic acceptor level at approximately 0.05 eV was also found. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE