RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.
Quarterly rept. no. 1, 1 Jan-31 Mar 62,
CLEVITE CORP CLEVELAND OHIO ELECTRONIC RESEARCH DIV
Pagination or Media Count:
First quarter progress on the purification, crystal growth, and properties of CdS, CdSe, and ZnTe are summarized. Difficulties were encountered when zone refining of CdSe was attempted. The advantages of using shaped tubes for vapor-phase growth of crystals are described. The vapor pressure of CdSe is discussed and compared with experimental data. The diffusion of Cd in CdSe was analyzed by conductivity measurements and the data are shown to agree closely with simple diffusion theory. A diffusion constant of 5.41 x 10-1 to the minus 10th power sq cmsec is obtained for a crystal temperature of 1000C. The temperature dependence of the carrier mobility shows that the dominant lattice scattering in CdSe and ZnTe is due to optical modes as in CdS. The mobility of the carriers in n-type CdSe and p-type ZnTe is 5300 sq cmvolt sec and 2550 sq cmvolt sec respectively at 79K in the particular crystals measured. Author
- Solid State Physics