Accession Number:

AD0626443

Title:

INVESTIGATION OF ULTRA HIGH VACUUM SPUTTERED THIN FILMS.

Descriptive Note:

Final rept., 1 Nov 63-31 Oct 65,

Corporate Author:

MALLORY (P R) AND CO INC BURLINGTON MA LAB FOR PHYSICAL SCIENCE

Report Date:

1965-11-30

Pagination or Media Count:

47.0

Abstract:

The structural and electrical characteristics of low pressure sputtered germanium films deposited on amorphous and single crystal substrates were investigated. The very low deposition rates of the experiments provided an opportunity to examine film growth as a function of the important parameters which influence it. The results of the investigation on amorphous quartz substrates have been presented in the paper entitled Low Pressure Sputtered Germanium Films- J. Vac. Sci. and Tech. 2, 97 1965. he most recent work concerned with insulating single crystal substrates is presented in the report. Preliminary investigations were made of the structural and electrical characteristics of silicon films sputtered under similar conditions as those used for germanium. The major factor of interest uncovered in this limited investigation concerned the apparently greater mobility of the deposited silicon atom on self substrates as compared to sapphire substrates. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE