Accession Number:

AD0626437

Title:

PRODUCTION ENGINEERING MEASURE ON 2N3375 SILICON OVERLAY TRANSISTOR.

Descriptive Note:

Quarterly progress rept. no. 3, 1 Jul-30 Sep 65,

Corporate Author:

RADIO CORP OF AMERICA MOUNTAINTOP PA ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s):

Report Date:

1965-09-30

Pagination or Media Count:

91.0

Abstract:

The following observations were made from the results of work performed in device processing areas 1 Tests made on devices that incorporated n-type diffusion demonstrated that POCl3 results in better control over impurity distribution. 2 The absence of metallization interface failures has confirmed that gold is the most suitable material for the mounting surface. 3 Evaluation of life test and yield improvement results have shown that it is adviseable to use a double evaporation system and increased thickness of the standard metal for contact metallization. 4 Ultrasonic lead bonding has been improved considerably. 5 Tightened endpoint criteria were necessary to establish an initial failure rate. A number of investigations were either continued or initiated during this quarter the investigation of oxide growth and doping was continued various photosensitive materials were investigated and hot spot detection with temperature sensitive phosphorus were investigated. Wafer handling fixtures were developed and are currently in use. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE