Accession Number:

AD0626134

Title:

INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS (7TH). 4. RADIATIVE RECOMBINATION IN SEMICONDUCTORS.

Descriptive Note:

Corporate Author:

SOCIETE FRANCAISE DE PHYSIQUE PARIS

Personal Author(s):

Report Date:

1964-01-01

Pagination or Media Count:

291.0

Abstract:

The symposium on Radiative recombination in semiconductors brought together about two hundred and fifty specialized physicists from some twenty countries. The proceedings give an up-to-date account of the physical processes which are fundamental in semiconductor lasers. The subjects treated include intrinsic radiative recombination, impurity and exciton effects, junction lasers, new excitation processes, in particular those involving an electron beam, and new materials which enlarge the field of semiconductor lasers toward the visible spectrum. Author

Descriptors:

• *SEMICONDUCTORS
• *LASERS
• EXCITATION
• IMPURITIES
• ELECTRON BEAMS
• FRANCE
• PHOTOCONDUCTIVITY

Subject Categories:

• Lasers and Masers
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE