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IMPROVED THIN-FILM CAPACITOR CHARACTERISTICS BY REANODIZATION.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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A capacitor with improved electrical characteristics was fabricated by the reanodization of previously anodized tantalum films. The technique is simple. Comparative data was obtained between anodized and reanodized tantalum films. The tantalum was deposited by sputtering approximately 1000 A of the metal onto glass substrates. The counter electrode was gold. The average voltage breakdown for the anodized samples was 60 of the formation voltage with 50 of all samples withstanding 70 V sub F. With the reanodized samples, the average breakdown was 140 V sub F 50 of all samples withstanding 100 V sub F and 11 withstanding 500 V sub F. As a corollary, the current leakage characteristics of the reanodized samples were also improved. The reanodized samples showed good reverse polarity characteristics. There was a 10 improvement in capacitance and 15 improvement in the temperature coefficient of capacitance. There was no difference in dissipation factor, it being 1.3 for both processes. Author
APPROVED FOR PUBLIC RELEASE