Accession Number:

AD0625440

Title:

RADIATION DAMAGE IN SILICON SOLAR CELLS FROM 4.6-MEV PROTON BOMBARDMENT.

Descriptive Note:

Final rept.,

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON D C

Personal Author(s):

• Statler,R. L.

Report Date:

1965-11-15

Pagination or Media Count:

45.0

Abstract:

A study was made of the radiation damage in ten types of silicon solar cells as a result of 4.6-Mev proton bombardment. The cells comprised such types as pn cells, np cells with different bulk-resistivities, planar cells, and drift-field cells. A comparative analysis was made of the radiation-induced degradation in these cells as a function of short-circuit current, maximum power output, minority-carrier diffusion length, and photovoltaic spectral response. The pn cells were found to be more sensitive to radiation damage than any type of np cell in this study. In the np cells, there is a definite trend toward increasing radiation resistance accompanying increasing values of bulk resistivity, up to 10 ohm-cm. The drift-field solar cells exhibit a further improvement in radiation resistance beyond that of the other types of np cells. Author

Descriptors:

• *PROTON BOMBARDMENT
• *DAMAGE
• SILICON
• SOLAR CELLS
• SOLAR CELLS
• PHOTOELECTRIC EFFECT
• ARTIFICIAL SATELLITES
• POWER SUPPLIES
• DEGRADATION
• DEGRADATION

Subject Categories:

• Electric Power Production and Distribution
• Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE