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RADIATION DAMAGE IN SILICON SOLAR CELLS FROM 4.6-MEV PROTON BOMBARDMENT.
NAVAL RESEARCH LAB WASHINGTON D C
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A study was made of the radiation damage in ten types of silicon solar cells as a result of 4.6-Mev proton bombardment. The cells comprised such types as pn cells, np cells with different bulk-resistivities, planar cells, and drift-field cells. A comparative analysis was made of the radiation-induced degradation in these cells as a function of short-circuit current, maximum power output, minority-carrier diffusion length, and photovoltaic spectral response. The pn cells were found to be more sensitive to radiation damage than any type of np cell in this study. In the np cells, there is a definite trend toward increasing radiation resistance accompanying increasing values of bulk resistivity, up to 10 ohm-cm. The drift-field solar cells exhibit a further improvement in radiation resistance beyond that of the other types of np cells. Author
APPROVED FOR PUBLIC RELEASE