Accession Number:

AD0625420

Title:

HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.

Descriptive Note:

Quarterly interim development rept. no. 2, 27 Aug-27 Nov 65,

Corporate Author:

CHATHAM ELECTRONICS DIV TUNG-SOL ELECTRIC INC LIVINGSTON N J

Personal Author(s):

• AKE,Nelson E.

Report Date:

1965-11-27

Pagination or Media Count:

21.0

Abstract:

A bare contoured junction does not hold up under a combination of vacuum and temperatures above 90C in the test chamber. Planar junction diodes were made which withstood a combination of vacuum and a temperature of 150C for a period in excess of 1000 hours. Limited results were obtained in making large area diodes either planar or open junction when the penetration of the rectifying junction is greater than 6 microns. The feasibility of selectively etching a dice down to within 2-3 microns of the junction was demonstrated. Author

Descriptors:

• *SOLID STATE PHYSICS
• POWER AMPLIFIERS
• SEMICONDUCTOR DIODES
• POWER AMPLIFIERS
• SEMICONDUCTORS
• PERFORMANCE(ENGINEERING)
• LEAKAGE(ELECTRICAL)
• PULSE AMPLIFIERS
• SILICON
• BORON
• PENETRATION

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE