DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click HERE
to register or log in.
HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.
Quarterly interim development rept. no. 2, 27 Aug-27 Nov 65,
CHATHAM ELECTRONICS DIV TUNG-SOL ELECTRIC INC LIVINGSTON N J
Pagination or Media Count:
A bare contoured junction does not hold up under a combination of vacuum and temperatures above 90C in the test chamber. Planar junction diodes were made which withstood a combination of vacuum and a temperature of 150C for a period in excess of 1000 hours. Limited results were obtained in making large area diodes either planar or open junction when the penetration of the rectifying junction is greater than 6 microns. The feasibility of selectively etching a dice down to within 2-3 microns of the junction was demonstrated. Author
APPROVED FOR PUBLIC RELEASE