Accession Number:

AD0625325

Title:

TRANSISTOR, VHF, SILICON, POWER, LINEAR, 30-MC, 100 WATTS PEP.

Descriptive Note:

Quarterly progress rept. no. 1, 1 Jun-31 Aug 65,

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE N J ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s):

• ROSENZWEIG,R.
• Carley,D. R.

Report Date:

1965-08-31

Pagination or Media Count:

59.0

Abstract:

The report contains information concerning the relationship of device design considerations to device operation in single sideband circuits. The requirement for low intermodulation distortion necessitates Class AB biasing, causing the device to operate in a mode where second breakdown and thermal runaway are prevalent. The reduction of second breakdown by the addition of ballast resistors and the use of a temperature compensating diode for bias point control are used to ensure reliable, safe operation. Photomasks have been designed for the 100-Watt, 30-megacycle device. The description of the pattern as well as the actual dimensions are given. Author

Descriptors:

• *SINGLE SIDEBAND COMMUNICATIONS
• MANUFACTURING
• TRANSISTORS
• TRANSISTOR AMPLIFIERS
• DIODES
• THERMAL STABILITY
• DISTORTION
• BONDING
• PACKAGING
• CERAMIC MATERIALS
• SILICON
• VERY HIGH FREQUENCY

Subject Categories:

• Electrical and Electronic Equipment
• Marine Engineering
• Radio Communications

Distribution Statement:

APPROVED FOR PUBLIC RELEASE