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FEASIBILITY STUDY OF METAL BASE TRANSISTOR.
Quarterly rept. no. 2, phase 2, 30 Apr-31 Jul 65,
SPRAGUE ELECTRIC CO NORTH ADAMS MASS
Pagination or Media Count:
Techniques for obtaining MoCl5 that is more highly purified for use as a vapor source have been developed and implemented. Deposits made with these sources have been investigated by electron diffraction and electron microscopy. Initial experiments have indicated that lowtemperature epitaxial growth of silicon layers will probably be feasible if growth uniformity can be maintained. Other experiments have shown that even very thin layers of deposited molybdenum retain their metallic character after being subjected to temperatures considered feasible for subsequent epitaxial growth. Measurement of photoresponse in molybdenum-silicon diodes has continued. Changes in the measurement equipment have engendered improved results, but measurements in the infrared spectrum still present difficulties in detection. Author
APPROVED FOR PUBLIC RELEASE