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THEORETICAL INVESTIGATION OF A NONPLANAR FIELD-EFFECT TRANSISTOR,
CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
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The report applies the generalized analysis of planar field-effect transistors developed by Richer to the calculation of theoretical performance in a volume field-effect transistor. Richers analysis is illustrated first, then the mathematical techniques are extended to cover the case of an arbitrarily-shaped volume FET. This extended general analysis is then applied to a FET with circular cylindricalgeometry. Graphs of computer solutions of FET draincurrent, drain-voltage characteristics, and of equivalentcircuit element values are presented. The characteristics of the planar and cylindrical FETs are compared. Author
APPROVED FOR PUBLIC RELEASE