Accession Number:

AD0623593

Title:

THEORETICAL INVESTIGATION OF A NONPLANAR FIELD-EFFECT TRANSISTOR,

Descriptive Note:

Corporate Author:

CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB

Personal Author(s):

• Levine,S. R.

Report Date:

1965-07-07

Pagination or Media Count:

66.0

Abstract:

The report applies the generalized analysis of planar field-effect transistors developed by Richer to the calculation of theoretical performance in a volume field-effect transistor. Richers analysis is illustrated first, then the mathematical techniques are extended to cover the case of an arbitrarily-shaped volume FET. This extended general analysis is then applied to a FET with circular cylindricalgeometry. Graphs of computer solutions of FET draincurrent, drain-voltage characteristics, and of equivalentcircuit element values are presented. The characteristics of the planar and cylindrical FETs are compared. Author

Descriptors:

• *TRANSISTORS
• MATHEMATICAL ANALYSIS
• CONFIGURATIONS
• VOLUME
• GRAPHICS
• ELECTRIC CURRENT
• VOLTAGE
• SPACE CHARGE
• CAPACITANCE

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE