Accession Number:

AD0623403

Title:

TRANSISTOR, FIELD EFFECT, INSULATOR GATE, 100-MC AMPLIFIER.

Descriptive Note:

Quarterly progress rept. no. 4, 1 Apr-30 Jun 65,

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE N J ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s):

• Dawson,R.
• Mitchell,M.

Report Date:

1965-06-30

Pagination or Media Count:

29.0

Abstract:

The present devices have power gains of 18 to 24db at 100mc operating at VsubD 6 volts and IsubD 2 ma. Noise figures average about 2.5db. Average gate breakdowns are 85 volts while the source-drain breakdowns average 20 volts. AGC and cross modulation characteristics are excellent. Noise measurements confirm the theory as predicted by Jordan and Jordan and exhibit a low pass roll off which occurs in the 10 to 100Mc region.

Descriptors:

• (*TRANSISTOR AMPLIFIERS
• VERY HIGH FREQUENCY)
• OXIDES
• METALS
• RADIOFREQUENCY POWER
• GAIN
• NOISE(RADIO)
• MODULATION
• PERFORMANCE(ENGINEERING)
• TRANSISTORS
• FEEDBACK

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE