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TRANSISTOR, FIELD EFFECT, INSULATOR GATE, 100-MC AMPLIFIER.
Quarterly progress rept. no. 4, 1 Apr-30 Jun 65,
RADIO CORP OF AMERICA SOMERVILLE N J ELECTRONIC COMPONENTS AND DEVICES
Pagination or Media Count:
The present devices have power gains of 18 to 24db at 100mc operating at VsubD 6 volts and IsubD 2 ma. Noise figures average about 2.5db. Average gate breakdowns are 85 volts while the source-drain breakdowns average 20 volts. AGC and cross modulation characteristics are excellent. Noise measurements confirm the theory as predicted by Jordan and Jordan and exhibit a low pass roll off which occurs in the 10 to 100Mc region.
APPROVED FOR PUBLIC RELEASE