Accession Number:

AD0621941

Title:

NEW SOLID-STATE DEVICE CONCEPTS.

Descriptive Note:

Scientific rept.,

Corporate Author:

GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER

Report Date:

1965-07-01

Pagination or Media Count:

35.0

Abstract:

Attention on CdS was shifted to stoichiometric problems and the effects of O2. Because of the high stability of SO2, firing CdS in O2 produces a reducing action on the bulk crystal, equivalent to a small excess Cd firing. Electrical transport and contact properties of 1 to 10 ohm-cm ntype ZnS crystals were studied. Two types of levels were found below the conduction band of ZnS shallow donor levels at 0.014 ev and deeper levels between 0.10 and 0.29 ev. Injection electroluminescent p-n junctions have been prepared from ZnSe0.36Te0.64 which show external quantum efficiencies of 18 at 70K. The resistance of various alloyed contacts and gold thermocompression bonds to n- and p-type GaAs was measured. The interface resistance of evaporated films of Ag, Au, and Al applied to GaAs is high unless the films are subjected to a high-temperature alloying step which damages their reflecting properties. Excellent laser diodes were made in which the p-type side was chemically etched down to within 2 microns of the junction. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE