FOUR-TERMINAL FIELD-EFFECT TRANSISTORS.
SASKATCHEWAN UNIV SASKATOON DEPT OF ELECTRICAL ENGINEERING
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A derivation is presented for the transconductances of a four-terminal transistor of arbitrary channel doping profile. The derivation takes into account finite barrier potential and is specifically applied to the symmetrical, abrupt-junction, four-terminal, field-effect transistor. Curves are presented showing variations of normalized transconductance with applied gate-source EMF. Author