Accession Number:
AD0621904
Title:
FOUR-TERMINAL FIELD-EFFECT TRANSISTORS.
Descriptive Note:
Revised ed.,
Corporate Author:
SASKATCHEWAN UNIV SASKATOON DEPT OF ELECTRICAL ENGINEERING
Personal Author(s):
Report Date:
1965-02-19
Pagination or Media Count:
2.0
Abstract:
A derivation is presented for the transconductances of a four-terminal transistor of arbitrary channel doping profile. The derivation takes into account finite barrier potential and is specifically applied to the symmetrical, abrupt-junction, four-terminal, field-effect transistor. Curves are presented showing variations of normalized transconductance with applied gate-source EMF. Author