Accession Number:

AD0621904

Title:

FOUR-TERMINAL FIELD-EFFECT TRANSISTORS.

Descriptive Note:

Revised ed.,

Corporate Author:

SASKATCHEWAN UNIV SASKATOON DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1965-02-19

Pagination or Media Count:

2.0

Abstract:

A derivation is presented for the transconductances of a four-terminal transistor of arbitrary channel doping profile. The derivation takes into account finite barrier potential and is specifically applied to the symmetrical, abrupt-junction, four-terminal, field-effect transistor. Curves are presented showing variations of normalized transconductance with applied gate-source EMF. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE