THE EFFECT OF PRESSURE AND TEMPERATURE ON THE EFFECTIVE MASS AND ENERGY GAP OF GaAs
Interim technical rept.
HARVARD UNIV CAMBRIDGE MA DIV OF ENGINEERING AND APPLIED PHYSICS
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The report describes the results of an investigation of the effect of pressure and temperature on the energy gap and electron effective mass of GaAs. For this material, the applicability of the zero temperature Kane k.p theory at finite temperature was quantitatively tested by measuring the Faraday rotation as a function of pressure and temperature. The quantitative comparison of experimentally determined masses with theory required three subsidiary measurements 1 the pressure change of energy gap of GaAs was found to be dE sub gdP 1.17 .03.10 to the minus 5th power eVbar 2 the long wavelength pressure change of refractive index of GaAs was found to be 1ndn dP - 7.0 0.5.10 to the minus 7th power 1bar and 3 the long wavelength temperature change of refractive index of GaAs was confirmed to be 1ndndT 4.5 0.5.10 to the minus 5th power 1K. The results of measurements on three n-type samples of GaAs as a function of temperature and pressure show that the data were fitted best by using the Kane k.p theory at finite temperature with an energy gap corrected from O K by accounting only for lattice expansion, rather than the experimentally determined optical energy gap which may be considered to have an implicit temperature dependence due to lattice expansion and an explicit temperature dependence.
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