PRODUCTION ENGINEERING MEASURE (PEM) FOR TRANSISTOR, PNP, SILICON, SWITCHING TYPE EL-2N(X-12).
Quarterly progress rept. no. 1, 25 Mar-25 Jun 65,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
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The developmental geometry was modified from a stripe emitter to a circle emitter. Device geometry was made smaller and greater versatility was achieved. Initial material resistivity produced adequate breakdowns when epitaxial film thickness exceeded 0.20 mil. However, initial device runs were characterized by high V sub CEsat low h sub FE and absolute value h sub fe. The fall off of h sub FE at low voltages and 10 milliamperes collector current was primarily due to the high V sub CEsat. Plots of h sub FE and absolute value h sub fe vs. collector current indicated the peak point of operation was approximately one milliampere. Switching times reflected these problems in long rise and fall times. The parasitic capacitances of the device package and the switching jig prevented a delay time of three nanoseconds. Gold diffusion was successful in attaining storage times below nine nanoseconds. Leakage currents were not appreciably affected by gold diffusion. Author