STUDIES ON HIGH POWER GAAS LASERS.
Final technical rept. on Proj. DEFENDER, for 1 Jun 6331 May 65,
IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y
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The report is a report on the studies of factors influencing the high power operation of GaAs injection laser diodes. The report deals specifically with aspects of GaAs crystal preparation, electrical and optical characterization of the material, and with the design, parameterization, and testing of GaAs injection laser diodes. Diodes have been operated at 77K with an energy output in excess of 0.001 joules during a 120 micron sec. pulse and with an external quantum efficiency of 18.